• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    29 Summary The direction of a dislocation line of a TD (threading dislocation) (3) is aligned, and an angle between the direction of the dislocation line of the TDzn (the threading dislocation) and a c-axis of an [0001] orientation is equal to or less than 22 ,5 degrees. The TD (the threading dislocation) having the dislocation line along the c-axis of the [0001] orientation is perpendicular to the direction of the dislocation line of a basal plane dislocation. Consequently, the intedislocation causes some prolonged dislocation on the c-surface, so that a stacking error is not generated. Thus, when an electrical device (4) is formed in a single crystalline silicon carbide substrate (1) as the direction of the hard dislocation line of the threading dislocation (TD), which is the c-axis of the [0001] orientation, a silicon carbide semiconductor device is obtained so that device its characteristics are excellent without deterioration, and the yield percentage on production is improved.
    公开号:SE536926C2
    申请号:SE1000082
    申请日:2010-01-28
    公开日:2014-11-04
    发明作者:Eiichi Okuno；Kensaku Yamamoto；Yasuo Kitou；Hiroki Watanabe；Masanori Nagaya
    申请人:Denso Corp；
    IPC主号:
    专利说明:

    [1] The shaft is set to be equal to or less than 22.5 degrees, the deterioration of the characteristics of the device and the reduction of the yield percentage during manufacture are prevented. (Here, the TD (the threading dislocation) is defined with the dislocation line passing through the surface (ie the c-surface) of the (O001) plane entirely as a TD (threading dislocation)).
    [1] The c-axis of the orientation, an angular deviation is defined as 6. A component along the direction of the basal plane rises, and the component is proportional to the sine 9. The component causes the extended dislocation and the component becomes a source of the stacking error, which impairs the device. characteristics. However, the present inventors have proven that the influence of the component is small when the angle. Is small.
    [1] Orientation c-axis equal to or less than 22.5 degrees (ie 19.5 degrees plus 3 degrees, ie = 19.5 ° + 3 °). Here the direction of the dislocation line of the TD (the threading dislocation) 3 in the single crystalline silicon carbide substrate 1 and the epitaxial film are reduced in such a way that an inclination direction to a north direction of a silicon wafer surface represents a positive angle. In the present embodiment, the direction of the dislocation line of the TD (the threading dislocation) 3 is aligned so that the angle G between the direction of the dislocation line of the TD (the threading dislocation) 3 and the c-axis of the [0001] orientation is equal to or less than 22 , 5 10 15 20 25 30 35 536 926 degrees. Because the TD (the threading dislocation) 3 which has the dislocation line along
    [1] The c-axis of the orientation is perpendicular to the direction of the dislocation line of the basal plane dislocation, the dislocation 3 does not cause the extended dislocation on the c-surface, so that the stacking error is not generated. Accordingly, when the electrical device 4 is formed in the single crystalline silicon carbide substrate having the direction of dislocation line of the TD (the threading dislocation) 3 as the c-axis of the [0001] orientation, the silicon carbide semiconductor is formed so that the characteristics of the device become excellent. no deterioration occurs and the rate of return on production improves.
    [1] The c-axis of the orientation passes.
    [1] The c-axis of the orientation with respect to all TDs (threading dislocations) arranged in the epitaxial film 2 in a range between minus three degrees and plus three degrees in relation to 17 degrees (ie [11-23 ] orientation direction).
    [1] The c-axis of the orientation with respect to all TDs (threading dislocations) arranged in the epitaxial film 2 in a range between minus three degrees and plus three degrees relative to 8.7 degrees (i.e. [11 -26] -orientation direction).
    [1] The c-axis of the [0001] orientation and a specific direction (eg the [OOO1] -orientation direction) at right angles to the c-axis of the [0001] orientation pass.
    [1] The c-axis of the orientation, which is equal to or greater than minus three degrees and equal to or less than 22.5 degrees. This may refer to the direction of the step flow as the epitaxial film 2 grows. It is proven that the inclination direction of the dislocation line of the TD (the threading dislocation) 3 and the step flow direction are the same.
    [1] The c-axis of the orientation with respect to all ths (threading dislocations) 3 arranged in the epitaxial film 2 of the single crystalline epitaxial silicon carbide disk having the displacement angle o with the displacement direction shown in fi g. 4A of the [1-100] orientation direction in a range between minus three degrees and plus three degrees relative to 15 degrees (ie, the [1-102j orientation direction).
    [1] The c-axis of the orientation with respect to all TDs (threading dislocations) 3 arranged in the epitaxial element 2 of the single crystalline epitaxial silicon carbide disk having the displacement angle d with the direction of displacement shown in fi g. 4A of the [0001] orientation direction in a range between minus three degrees and plus three degrees relative to 7.6 degrees (ie the [1-104] orientation direction.
    [1] The orientation is in a range between minus three degrees and 22.5 degrees. When the electrical device is formed on such a single crystalline epitaxial silicon carbide wafer, the characteristics of the device are excellent, the interference is limited and the yield percentage during manufacture is improved. In addition, the TD (the threading dislocation) is arranged on the (11-20) surface and the dislocation line is oriented to be inclined on the same orientation surface. Consequently, the deterioration and yield percentage during production are limited. For example, when the field effect transistor having the channel surface of the (11-20) surface is formed in the single crystalline silicon carbide substrate, the dislocation line does not cross the channel surface. Consequently, the characteristics and reliability of the transistor are greatly improved.
    Alternatively, the angle between the direction of the dislocation line of the TD (the threading dislocation) and the c-axis of the [00O1] orientation may be in a range between minus three degrees and plus three degrees with a center of 19.5 degrees, the angle being denoted by normal the direction of the substrate surface along the [1-100] orientation direction.
    Alternatively, the angle between the direction of the dislocation line of the TD (the threading dislocation) and the c-axis of the [0001] orientation may be in a range between minus three degrees and plus three degrees with a center of 15 degrees, the angle being defined by the normal direction. of the substrate surface along the [1-100] orientation direction. Alternatively, the angle between the direction of the dislocation line of the TD (the threading dislocatlon) and the c-axis of the [0001] orientation may be in a range between minus three degrees and plus three degrees with a center of 7, 6 degrees, the angle being defined by the normal direction of the substrate surface along the [1-100] orientation direction.
    Alternatively, the epitaxial elm may have a concentration of impurities which is lower than a concentration of impurities of the single crystalline silicon carbide substrate and the concentration of impurities of the epitaxial elm is equal to or less than 1x10 "cm" '°'. The direction of the TD (the threading dislocatlon) in the epitaxial film of the single crystalline epitaxial silicon carbide disk is determined by, for example, a concentration of impurities, in this case, since the concentration of impurities in the epitaxial film is less than the concentration of impurities in the single crystalline silicon carbide substrate, the epitaxial film suitable for the device process.
    Alternatively, the threading dislocation (TD) may include an edge dislocation. Thus, since the dislocation includes the edge dislocation, an interrupt time can be extended, as compared with a case where the dislocation includes a screw dislocation, if an electrical device such as a power device such as a diode and a MOS transistor is formed in a single crystalline epitaxial silicon carbide disk or a single crystalline silicon carbide substrate. Thus, the characteristics of the device become very excellent.
    According to a fourth aspect of the present application, a silicon carbide semiconductor comprises the following: an electrical device arranged in the single crystalline silicon carbide substrate or in the single crystalline epitaxial silicon carbide wafer. The characteristics of the device become very excellent.
    According to a fifth aspect of the present application, a silicon carbide semiconductor device comprises the following: a field effect transistor as an electrical device, which has a channel surface of a (1-100) surface arranged in the single crystalline silicon carbide wafer. The characteristics of the device are very excellent.
    According to a sixth aspect of the present application, a silicon carbide semiconductor device comprises the following: a field effect transistor as an electrical device, which has a channel surface of one (11-20) surface arranged in the single crystalline silicon carbide wafer. The characteristics of the device are very excellent. Although the invention has been described with reference to preferred embodiments thereof, it is to be understood that the invention is not limited to the preferred embodiments and constructions. The invention is intended to cover various modifications and equivalent arrangements. In addition, although the various combinations and configurations which are preferred, other combinations and the configuration including several, fewer or only a single element, are also within the spirit and scope of the invention .---- 24
    权利要求:
    Claims (20)
    [1] 1. A silicon carbide single crystal substrate comprising:' a threading dislocation (3) with a dislocation line, which penetrates a(00O1)~plane c-face, wherein an angle between the direction of the dislocation line of thethreading dislocation (3) and a [0001]-orientation c-axis is equal to or smallerthan 22.5 degrees.
    [2] 2. The silicon carbide single crystal substrate according to claim 1, y wherein the angle between the direction of the dislocation line of thethreading dislocation (3) and the [0001]forientation c-axis is in a range betweenminus three degrees and plus three degrees with a center of aspecific direction,which is equal to or smaller than 19.5 degrees. d
    [3] 3. The silicon carbide single crystal substrate according to claim 2, wherein the direction of the dislocation line of the threading dislocation(3) is in a range between minus three degrees and plus three degrees with acenter of a direction in parallel to the [0001]-orientation c-axis.
    [4] 4. The silicon carbide single crystal substrate according to claim 1,wherein the direction of the dislocation line of the threading dislocation(3) is in parallel to the [0001]-orientation c-axis.
    [5] 5. The silicon carbide single crystal substrate according to any one of claims 1-4, ywherein the threading dislocation (3) includes a threading edgedislocation.
    [6] 6. A silicon carbide semiconductordevice comprising:an electric device (4) disposed in the silicon carbidesingle crystalsubstrate according to any one of claims 1-5. Q
    [7] 7. A silicon carbide single crystal epitaxial wafer comprising:a silicon carbide single crystal substrate (1) having an offset direction ofa [11-20]-orientation direction; andan epitaxial film (2) disposed on the silicon carbide single crystalsubstrate (1), yi wherein the epitaxial film (2) includes a threading dislocation (3) with adislocation line, which penetrates a. (OO01)-plane c-face,wherein an angle between the direction of the dislocation line of thethreading dislocation (3) and a [O001]-orientation c-axis is in a range betweenminus three degrees and plus twenty degrees, _ ywherein a positive sense of the angle is defined by a direction from thec-axis to a normal direction of a substrate surface, the normal direction beingarranged between the [11-20]-orientation direction and the c-axis, andwherein the threading dislocation (3) is disposed on a (1-100)-face.
    [8] 8. The silicon carbide single crystal epitaxial wafer according to claim 7, wherein the angle between the direction of the dislocation line of thethreading dislocation (3) and the [O001]-orientation c-axis is in a range (betweenminus three degrees and plus three degrees with a center of 17 degrees, wherein a positive sense of the angle is defined by a direction from thec-axis to a normal direction of a substrate surface, the normal directionbeingarranged between the [11-20]-orientation direction and the c-axis. i
    [9] 9. The silicon carbide single crystal epitaxial wafer according to claim 7,wherein the angle between the direction of the dislocation line of thethreading dislocation (3) and the [O001]-orientation c-axis is in a' range betweenminus three degrees and plus three degrees with a center of 8.7 degrees, andwherein a positive sense of the angle is defined by a direction from thec-axis to a normal direction of a substrate surface, the normal direction beingarranged betvveenthe [11-20]-orientation direction and the c-axis.
    [10] 10. The silicon carbide single crystal epitaxial wafer according to any31 one of claims 7-9, . wherein the epitaxial film (2) has an impurity concentration, which islower than an impurity concentration of the silicon carbide single crystalsubstrate (1), and ^ wherein the impurity concentration of the epitaxial film (2) is equal to orsmaller than 1x1017cm'3. a
    [11] 11. The silicon carbide single crystal epitaxial wafer according to anyone of claims 7-10, wherein the threading dislocation '(3) includes a threading edgedislocation.
    [12] 12. A silicon carbide semiconductor device comprising:an electric device (4) disposed in the silicon carbide single crystalepitaxial wafer according to any one of claims 7-11.
    [13] 13. A silicon carbide semiconductor device comprising:a field effect transistor as an electric device (4) having a channel surface of a (1-100)-face disposed in the silicon carbide single crystal epitaxial wafer according to any one of claims 7-9.
    [14] 14. A silicon carbide single crystal epitaxial wafer comprising: a silicon carbide single crystal substrate (1) having an offset direction ofa [1-100]-orientation direction; and an epitaxial film (2) disposed on the silicon carbide single crystalsubstrate (1), wherein the epitaxial film (2) includes a threading dislocation (3) with adislocation line, which penetrates a (0001)-plane c-face, wherein an angle between the direction of the dislocation line of thethreading dislocation (3) and a [0001]-orientation c-axis is in a range betweenminus three degrees and plus 22.5 degrees, wherein a positive sense of the angle isdefined by a direction from the32 c-axisto a normal direction of a substrate surface, the normal direction beingarranged between the [1-100]-orientation direction and the cfaxis, andwherein the threading dislocation (3) is disposed on a (11-20)-face.
    [15] 15. The silicon carbide single crystal epitaxial wafer according to claim14, i wherein the angle between the direction of the dislocation line of thethreading dislocation (3) and the [OO01]-orientation c-axis is in a range betweenminus three degrees and plus three degrees with a center of 19.5 degrees, and wherein a positive sense of the angle is defined by a direction from thec-axis to a normal direction of a substrate surface, the normal direction beingarranged between the [1-100]-orientation direction and the c-axis.
    [16] 16. The silicon carbide single crystal epitaxialwafer according to claim 14, wherein the angle between the direction of the dislocation line of thethreading dislocation (3) and the [OO01]-orientation c-axis is in a range betweenminus three degrees and plus three degrees with a center of 15 degrees, and wherein a positive sense of the angle is defined by a direction from thec-axis to a normal direction of a substrate surface, the normal direction beingarranged between the [1-100]-orientation direction and the c-axis.
    [17] 17. The silicon carbide single crystal. epitaxial wafer according to claim14, wherein the angle between the direction of the dislocation line of thethreading dislocation (3) and .the [OO01]-orientation c-axis is in a range betweenminus three degrees and plus three degrees with a center of 7.6 degrees, and wherein a positive sense of the angle is defined by a direction from thec-axis to a normal direction of a substrate surface, the normal direction beingarranged between the [1-100]-orientation direction and the c-axis.
    [18] 18. The silicon carbide single crystal epitaxial wafer according to any33 one of claims 14-17, i wherein the epitaxial film (2) has an impurity concentration, which islower than an impurity concentration of the silicon carbide single crystalsubstrate (1), and wherein the impurity concentration of the epitaxial film (2) is equal to orsmaller than 1x1017cm'3; d A
    [19] 19. The silicon carbide single crystal epitaxial wafer according to any, one of claims) 14-18,wherein the threading dislocation (3) includes a threading edgedislocation.
    [20] 20. A silicon carbide semiconductor device comprising: a field effect transistor as an electric device (4) having a channel surfaceof a (11-20)-face disposed in the silicon carbide single crystal epitaxial waferaccording to any one of claims 14-17. 34
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    法律状态:
    优先权:
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